Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions
نویسندگان
چکیده
منابع مشابه
MOBILITY MODELING IN SOI FETS FOR DIFFERENT SUBSTRATE ORIENTATIONS AND STRAIN CONDITIONS SHORT TITLE: MOBILITY MODELING IN SOI FETs
Conduction band modification due to shear stress is investigated. Mobility in singleand double-gate SOI FETs is modeled for Silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.
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